Department of Physics, Tsinghua University, Beijing 100084, China.
Phys Rev Lett. 2010 Aug 13;105(7):076801. doi: 10.1103/PhysRevLett.105.076801. Epub 2010 Aug 9.
We report the direct observation of Landau quantization in Bi2Se3 thin films by using a low-temperature scanning tunneling microscope. In particular, we discovered the zeroth Landau level, which is predicted to give rise to the half-quantized Hall effect for the topological surface states. The existence of the discrete Landau levels (LLs) and the suppression of LLs by surface impurities strongly support the 2D nature of the topological states. These observations may eventually lead to the realization of quantum Hall effect in topological insulators.
我们通过使用低温扫描隧道显微镜直接观察到 Bi2Se3 薄膜中的 Landau 量子化。特别是，我们发现了零级 Landau 能级，该能级预计会导致拓扑表面态的半量子化霍尔效应。离散的 Landau 能级（LLs）的存在以及表面杂质对 LLs 的抑制强烈支持了拓扑态的 2D 性质。这些观察结果可能最终导致在拓扑绝缘体中实现量子霍尔效应。
