Du Hongjian, Sun Xia, Liu Xiaogang, Wu Xiaojun, Wang Jufeng, Tian Mingyang, Zhao Aidi, Luo Yi, Yang Jinlong, Wang Bing, Hou J G
Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information &Quantum Physics, Key Laboratory of Strong-Coupled Quantum Matter Physics (CAS), University of Science and Technology of China, Hefei, Anhui 230026, China.
Nat Commun. 2016 Mar 11;7:10814. doi: 10.1038/ncomms10814.
The development of next-generation electronics is much dependent on the discovery of materials with exceptional surface-state spin and valley properties. Because of that, bismuth has attracted a renewed interest in recent years. However, despite extensive studies, the intrinsic electronic transport properties of Bi surfaces are largely undetermined due to the strong interference from the bulk. Here we report the unambiguous determination of the surface-state Landau levels in Bi (111) ultrathin films using scanning tunnelling microscopy under magnetic fields perpendicular to the surface. The Landau levels of the electron-like and the hole-like carriers are accurately characterized and well described by the band structure of the Bi (111) surface from density functional theory calculations. Some specific surface spin states with a large g-factor are identified. Our findings shed light on the exploiting surface-state properties of Bi for their applications in spintronics and valleytronics.
下一代电子学的发展在很大程度上依赖于具有优异表面态自旋和能谷特性的材料的发现。因此，铋近年来重新引起了人们的关注。然而，尽管进行了广泛的研究，但由于体相的强烈干扰，铋表面的本征电子输运性质在很大程度上仍未确定。在此，我们报告了在垂直于表面的磁场下，使用扫描隧道显微镜对铋（111）超薄膜中表面态朗道能级的明确测定。电子型和空穴型载流子的朗道能级通过密度泛函理论计算得到的铋（111）表面能带结构被准确表征并得到了很好的描述。确定了一些具有大g因子的特定表面自旋态。我们的研究结果为利用铋的表面态特性在自旋电子学和谷电子学中的应用提供了线索。
