The University of Western Ontario, London, Ontario, Canada.
Biophys J. 2010 Oct 6;99(7):2077-86. doi: 10.1016/j.bpj.2010.07.032.
Amino-terminus and carboxyl-terminus of connexins have been proposed to be responsible for the transjunctional voltage-dependent gating (V(j)-gating) and the unitary gap junction channel conductance (γ(j)). To better understand the molecular structure(s) determining the V(j)-gating properties and the γ(j) of Cx50, we have replaced part of the amino-terminus of mCx50 by the corresponding domain of mCx36 to engineer a chimera Cx50-Cx36N, and attached GFP at the carboxyl-terminus of mCx50 to construct Cx50-GFP. The dual whole-cell patch-clamp technique was used to test the resulting gap junction channel properties in N2A cells. The Cx50-Cx36N gap junction channel lowered the sensitivity of steady-state junctional conductance to V(j) (G(j)/V(j) relationship), slowed V(j)-gating kinetics, and reduced γ(j) as compared to Cx50 channel. Cx50-GFP gap junction channel showed similar V(j)-gating properties and γ(j) to Cx50 channel. We further characterized a mutation, Cx50N9R, where the Asn (N) at the ninth position of Cx50 was replaced by the corresponding Arg (R) at Cx36. The G(j)/V(j) relationship of Cx50N9R channel was significantly changed; most strikingly, the macroscopic residual conductance (G(min)) was near zero. Moreover, the single Cx50N9R channel only displayed one open state (γ(j) = 132 ± 4 pS), and no substate could be detected. Our data suggest that the NT of Cx50 is critical for both the V(j)-gating and the γ(j), and the introduction of a positively charged Arg at the ninth position reduced the G(min) with a correlated disappearance of the substate at the single channel level.
连接蛋白的氨基末端和羧基末端被认为负责跨连接电压门控(V(j)-门控)和单一缝隙连接通道电导(γ(j))。为了更好地理解决定 V(j)-门控特性和 Cx50γ(j)的分子结构,我们用 mCx36 的相应结构域替换 mCx50 的氨基末端的一部分,构建嵌合体 Cx50-Cx36N,并在 mCx50 的羧基末端连接 GFP,构建 Cx50-GFP。采用双全细胞膜片钳技术检测 N2A 细胞中形成的缝隙连接通道特性。与 Cx50 通道相比,Cx50-Cx36N 缝隙连接通道降低了稳态连接电导对 V(j)的敏感性(G(j)/V(j)关系),减慢了 V(j)-门控动力学,并降低了γ(j)。Cx50-GFP 缝隙连接通道表现出与 Cx50 通道相似的 V(j)-门控特性和γ(j)。我们进一步研究了一个突变,Cx50N9R,其中 Cx50 的第九位的 Asn(N)被 Cx36 对应的 Arg(R)取代。Cx50N9R 通道的 G(j)/V(j)关系发生了显著变化;最显著的是,宏观残余电导(G(min))接近零。此外,单个 Cx50N9R 通道仅显示一个开放状态(γ(j) = 132 ± 4 pS),并且无法检测到亚状态。我们的数据表明,Cx50 的 NT 对于 V(j)-门控和γ(j)都是至关重要的,在第九位引入带正电荷的 Arg 会降低 G(min),并在单通道水平上相关的亚状态消失。