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Dispersion engineered Ge11.5As24Se64.5 nanowires with a nonlinear parameter of 136 W⁻¹m⁻¹ at 1550 nm.

作者信息

Gai Xin, Madden Steve, Choi Duk-Yong, Bulla Douglas, Luther-Davies Barry

机构信息

Centre for Ultrahigh-bandwidth Devices for Optical Systems, Laser Physics Centre, Research School of Physics and Engineering, The Australian National University, Canberra ACT2600, Australia.

出版信息

Opt Express. 2010 Aug 30;18(18):18866-74. doi: 10.1364/OE.18.018866.

DOI:10.1364/OE.18.018866
PMID:20940779
Abstract

We have fabricated 630 × 500 nm nanowires from Ge(11.5)As(24)Se(64.5) chalcogenide glass by electron beam lithography (EBL) and inductively coupled plasma (ICP) etching. The loss of the nanowire was measured to be 2.6 dB/cm for the fundamental TM mode. The nonlinear coefficient (γ) was determined to be ≈136 ± 7 W(-1)m(-1) at 1550 nm by both CW four-wave-mixing (FWM) and modeling. Supercontinuum (SC) was produced in an 18 mm long nanowire pumped by 1 ps pulses with peak power of 25 W.

摘要

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