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来自硅注入氮化硅薄膜的电可调白色电致发光

Electrically tunable white-color electroluminescence from Si-implanted silicon nitride thin film.

作者信息

Cen Z H, Chen T P, Liu Z, Liu Y, Ding L, Yang M, Wong J I, Yu S F, Goh W P

机构信息

School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, Singapore.

出版信息

Opt Express. 2010 Sep 13;18(19):20439-44. doi: 10.1364/OE.18.020439.

Abstract

Visible electroluminescence (EL) with two composite bands, i.e., a violet band and a green-yellow band has been observed from Si-implanted silicon nitride thin films. By varying the intensity ratio of the two composite EL bands in terms of the injection current, strong white-color EL can be achieved at certain injection currents (e.g., ~265 mA/cm(2)). The observed transition in EL color from violet to white under different injection conditions is studied based on the understanding that the violet band is originated from silicon nitride matrix while the green-yellow band is related to the implanted Si. The Si-implanted silicon nitride thin film offers the possibility of electrically tunable white-light Si-based light emitters.

摘要

在硅离子注入的氮化硅薄膜中观察到了具有两个复合带的可见电致发光(EL),即一个紫光带和一个绿黄带。通过改变两个复合EL带的强度比与注入电流的关系,在一定的注入电流(例如,~265 mA/cm²)下可以实现强白色EL。基于紫光带源自氮化硅基体而绿黄带与注入的硅有关的认识,研究了在不同注入条件下观察到的EL颜色从紫色到白色的转变。硅离子注入的氮化硅薄膜为电可调谐的硅基白光发光器提供了可能性。

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