Nanoscience Centre, University of Cambridge, Cambridge CB3 0FF, United Kingdom.
Nano Lett. 2010 Nov 10;10(11):4316-20. doi: 10.1021/nl1013713.
We demonstrate a room temperature processed ferroelectric (FE) nonvolatile memory based on a ZnO nanowire (NW) FET where the NW channel is coated with FE nanoparticles. A single device exhibits excellent memory characteristics with the large modulation in channel conductance between ON and OFF states exceeding 10(4), a long retention time of over 4 × 10(4) s, and multibit memory storage ability. Our findings provide a viable way to create new functional high-density nonvolatile memory devices compatible with simple processing techniques at low temperature for flexible devices made on plastic substrates.
我们展示了一种基于氧化锌纳米线（NW）场效应晶体管（FET）的室温处理铁电（FE）非易失性存储器，其中 NW 通道涂覆有 FE 纳米粒子。单个器件表现出优异的记忆特性，在导通和截止状态之间的沟道电导调制超过 10^4，超过 4×10^4 s 的长保持时间，以及多位存储能力。我们的研究结果为在塑料衬底上制造的柔性器件提供了一种可行的方法，以创建与低温下的简单处理技术兼容的新型功能高密度非易失性存储器器件。
