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基于配体壳隔离的 ZnO 纳米粒子的薄膜存储晶体管的概念。

Concept of a thin film memory transistor based on ZnO nanoparticles insulated by a ligand shell.

机构信息

Organic Materials & Devices, Dept. of Materials Science, University Erlangen-Nürnberg, Martensstraße 07, 91058, Erlangen, Germany.

出版信息

Nanoscale. 2012 Jan 21;4(2):444-7. doi: 10.1039/c2nr11589a. Epub 2011 Dec 12.

DOI:10.1039/c2nr11589a
PMID:22159764
Abstract

In this work, we report on the synthesis and the electrical properties of ZnO nanoparticles, which differ in their organic shell. The introduction of a 2-ethylhexanoate shell instead of a common acetate shell has an impact on the accessible size of the ZnO nanoparticles and changes the electrical properties of thin films in transistors. While acetate covered ZnO particles behave as a semiconductor with an electron mobility of 0.38 cm(2) V(-1) s(-1), the 2-ethylhexanoate ligand shell inhibits a charge transport resulting in insulating films (with an average ε(r) = 9.4). These films can be reconverted to semiconductive layers by removing the ligand shell with oxygen plasma treatment or they can be used as a solution processed dielectric layer in organic transistors. Its use as dielectric allows low voltage device operation and shows potential application as a charge storage layer as needed in non-volatile memory transistors.

摘要

在这项工作中,我们报告了 ZnO 纳米粒子的合成和电学性质,这些纳米粒子的有机壳不同。用 2-乙基己酸酯壳代替常见的乙酸盐壳会影响 ZnO 纳米粒子的可及尺寸,并改变晶体管中薄膜的电学性质。虽然覆盖有乙酸盐的 ZnO 颗粒表现为电子迁移率为 0.38 cm(2) V(-1) s(-1)的半导体,但 2-乙基己酸酯配体壳抑制电荷输运,导致绝缘薄膜(平均 ε(r) = 9.4)。可以通过用氧等离子体处理去除配体壳将这些薄膜重新转化为半导体层,或者可以将其用作有机晶体管中的溶液处理介电层。它作为介电质的使用允许低电压器件操作,并显示出作为电荷存储层的潜在应用,如在非易失性存储器晶体管中需要的那样。

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