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采用蘸笔纳米光刻法在单个石墨烯片上制作电极接触。

Dip-pen nanolithography of electrical contacts to single graphene flakes.

机构信息

Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States.

出版信息

ACS Nano. 2010 Nov 23;4(11):6409-16. doi: 10.1021/nn101324x. Epub 2010 Oct 14.

Abstract

This study evaluates an alternative to electron-beam lithography for fabricating nanoscale graphene devices. Dip-pen nanolithography is used for defining monolayer graphene flakes and for patterning of gold electrodes through writing of an alkylthiol on thin films of gold evaporated onto graphene flakes. A wet gold etching step was used to form the individual devices. The sheet resistances of these monolayer graphene devices are comparable to reported literature values. This alternative technique for making electrical contact to 2D nanostructures provides a platform for fundamental studies of nanomaterial properties. The merits of using dip-pen nanolithography include lack of electron-beam irradiation damage and targeted patterning of individual devices with imaging and writing conducted in the same instrument under ambient conditions.

摘要

本研究评估了一种用于制造纳米级石墨烯器件的替代电子束光刻技术。通过在蒸发到石墨烯薄片上的金薄膜上书写烷基硫醇,使用蘸笔纳米光刻术来定义单层石墨烯薄片并对金电极进行图案化。使用湿金蚀刻步骤形成各个器件。这些单层石墨烯器件的面电阻与已报道的文献值相当。这种用于与二维纳米结构进行电接触的替代技术为纳米材料特性的基础研究提供了平台。使用蘸笔纳米光刻术的优点包括没有电子束辐照损伤,以及在环境条件下在同一仪器中进行成像和书写,从而对单个器件进行有针对性的图案化。

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Precision cutting and patterning of graphene with helium ions.氦离子对石墨烯的精确切割和图案化。
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