Department of Medical Biophysics, Sunnybrook Health Sciences Centre, University of Toronto, Toronto, Ontario M4N 3M5, Canada.
Med Phys. 2010 Sep;37(9):4982-5. doi: 10.1118/1.3483096.
The feasibility of a practical solid-state technology for low photon flux imaging applications was investigated. The technology is based on an amorphous selenium photoreceptor with a voltage-controlled avalanche multiplication gain. If this photoreceptor can provide sufficient internal gain, it will be useful for an extensive range of diagnostic imaging systems.
The avalanche photoreceptor under investigation is referred to as HARP-DRL. This is a novel concept in which a high-gain avalanche rushing photoconductor (HARP) is integrated with a distributed resistance layer (DRL) and sandwiched between two electrodes. The avalanche gain and leakage current characteristics of this photoreceptor were measured.
HARP-DRL has been found to sustain very high electric field strengths without electrical breakdown. It has shown avalanche multiplication gains as high as 10(4) and a very low leakage current (< or = 20 pA/mm2).
This is the first experimental demonstration of a solid-state amorphous photoreceptor which provides sufficient internal avalanche gain for photon counting and photon starved imaging applications.
研究一种实用的固态技术用于低光子通量成像应用的可行性。该技术基于具有电压控制雪崩倍增增益的非晶硒光电导体。如果这种光电导体能提供足够的内部增益，它将对广泛的诊断成像系统有用。
所研究的雪崩光电导体称为 HARP-DRL。这是一个新的概念，其中高增益雪崩快速光电导器（HARP）与分布式电阻层（DRL）集成，并夹在两个电极之间。测量了这种光电导体的雪崩增益和漏流特性。
已经发现 HARP-DRL 可以在没有电击穿的情况下承受非常高的电场强度。它表现出高达 10(4)的雪崩倍增增益和非常低的漏流（<=20 pA/mm2）。
这是第一个实验证明一种固态非晶光电导体，它为光子计数和光子饥饿成像应用提供了足够的内部雪崩增益。
