Department of Material Science, International Christian University, 181-8585 Tokyo, Japan.
Sensors (Basel). 2013 Oct 11;13(10):13744-78. doi: 10.3390/s131013744.
Amorphous-selenium (a-Se) based photodetectors are promising candidates for imaging devices, due to their high spatial resolution and response speed, as well as extremely high sensitivity enhanced by an internal carrier multiplication. In addition, a-Se is reported to show sensitivity against wide variety of wavelengths, including visible, UV and X-ray, where a-Se based flat-panel X-ray detector was proposed. In order to develop an ultra high-sensitivity photodetector with a wide detectable wavelength range, a photodetector was fabricated using a-Se photoconductor and a nitrogen-doped diamond cold cathode. In the study, a prototype photodetector has been developed, and its response to visible and ultraviolet light are characterized.
基于非晶态硒(a-Se)的光电探测器由于其高空间分辨率和响应速度,以及通过内部载流子倍增提高的极高灵敏度,是成像设备的有前途的候选者。此外,据报道,a-Se 对包括可见光、紫外线和 X 射线在内的各种波长都具有灵敏度,其中提出了基于 a-Se 的平板 X 射线探测器。为了开发具有宽检测波长范围的超高灵敏度光电探测器,使用 a-Se 光电导体和掺氮金刚石冷阴极制造了光电探测器。在这项研究中,开发了一种原型光电探测器,并对其对可见光和紫外线的响应进行了表征。