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有机离子对 1eV 至 60keV 电子诱导 DNA 损伤的影响。

Influence of organic ions on DNA damage induced by 1 eV to 60 keV electrons.

机构信息

Research Institute of Photocatalysis, Fuzhou University, Fuzhou 35002, People's Republic of China.

出版信息

J Chem Phys. 2010 Oct 21;133(15):155102. doi: 10.1063/1.3505046.

Abstract

We report the results of a study on the influence of organic salts on the induction of single strand breaks (SSBs) and double strand breaks (DSBs) in DNA by electrons of 1 eV to 60 keV. Plasmid DNA films are prepared with two different concentrations of organic salts, by varying the amount of the TE buffer (Tris-HCl and EDTA) in the films with ratio of 1:1 and 6:1 Tris ions to DNA nucleotide. The films are bombarded with electrons of 1, 10, 100, and 60 000 eV under vacuum. The damage to the 3197 base-pair plasmid is analyzed ex vacuo by agarose gel electrophoresis. The highest yields are reached at 100 eV and the lowest ones at 60 keV. The ratios of SSB to DSB are surprisingly low at 10 eV (∼4.3) at both salt concentrations, and comparable to the ratios measured with 100 eV electrons. At all characteristic electron energies, the yields of SSB and DSB are found to be higher for the DNA having the lowest salt concentration. However, the organic salts are more efficient at protecting DNA against the damage induced by 1 and 10 eV electrons. DNA damage and protection by organic ions are discussed in terms of mechanisms operative at each electron energy. It is suggested that these ions create additional electric fields within the groove of DNA, which modify the resonance parameter of 1 and 10 eV electrons, namely, by reducing the electron capture cross-section of basic DNA units and the lifetime of corresponding transient anions. An interstrand electron transfer mechanism is proposed to explain the low ratios for the yields of SSB to those of DSB produced by 10 eV electrons.

摘要

我们报告了关于 1 eV 至 60 keV 电子在 DNA 中诱导单链断裂(SSB)和双链断裂(DSB)的影响的研究结果。通过改变薄膜中 TE 缓冲液(Tris-HCl 和 EDTA)的量,我们用两种不同浓度的有机盐制备了质粒 DNA 薄膜,TE 缓冲液与 DNA 核苷酸的 Tris 离子比例为 1:1 和 6:1。在真空中用 1、10、100 和 60000 eV 的电子对薄膜进行轰击。通过琼脂糖凝胶电泳在真空中分析 3197 碱基对质粒的损伤。在 100 eV 时达到最大损伤,在 60 keV 时达到最小损伤。在两种盐浓度下,10 eV 时 SSB 与 DSB 的比值均出乎意料地低(∼4.3),与 100 eV 电子测量的比值相当。在所有特征电子能量下,盐浓度最低的 DNA 的 SSB 和 DSB 产率均较高。然而,有机盐在保护 DNA 免受 1 和 10 eV 电子诱导的损伤方面更为有效。根据每种电子能量下起作用的机制,讨论了有机离子对 DNA 损伤和保护的作用。有人提出,这些离子在 DNA 的沟槽内产生额外的电场,从而改变 1 和 10 eV 电子的共振参数,即通过降低碱性 DNA 单元的电子俘获截面和相应瞬态阴离子的寿命。提出了一种链间电子转移机制来解释由 10 eV 电子产生的 SSB 与 DSB 产率之比低的原因。

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