State Key Laboratory of Applied Organic Chemistry (SKLAOC), College of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou, 730000, China.
J Am Chem Soc. 2010 Nov 24;132(46):16349-51. doi: 10.1021/ja107046s. Epub 2010 Oct 27.
We demonstrate a strategy for designing high-performance, ambipolar, acene-based field-effect transistor (FET) materials, which is based on the replacement of C-H moieties by nitrogen atoms in oligoacenes. By using this strategy, two organic semiconductors, 6,13-bis(triisopropylsilylethynyl)anthradipyridine (1) and 8,9,10,11-tetrafluoro-6,13-bis(triisopropylsilylethynyl)-1-azapentacene (3), were synthesized and their FET characteristics studied. Both materials exhibit high and balanced hole and electron mobilities, 1 having μ(h) and μ(e) of 0.11 and 0.15 cm(2)/V·s and 3 having μ(h) and μ(e) of 0.08 and 0.09 cm(2)/V·s, respectively. The successful demonstration of high and balanced ambipolar FET properties from nitrogen-containing oligoacenes opens up new opportunities for designing high-performance ambipolar organic semiconductors.
我们展示了一种设计高性能双极性并五苯基场效应晶体管（FET）材料的策略，该策略基于在齐聚并五苯中用氮原子取代 C-H 部分。通过使用这种策略，合成了两种有机半导体，6,13-双（三异丙基硅基乙炔基）蒽并二吡啶（1）和 8,9,10,11-四氟-6,13-双（三异丙基硅基乙炔基）-1-氮杂并五苯（3），并研究了它们的 FET 特性。这两种材料都表现出高且平衡的空穴和电子迁移率，其中 1 的空穴迁移率和电子迁移率分别为 0.11 和 0.15 cm2/V·s，3 的空穴迁移率和电子迁移率分别为 0.08 和 0.09 cm2/V·s。含氮齐聚并五苯中高且平衡的双极性 FET 性质的成功证明为设计高性能双极性有机半导体开辟了新的机会。
