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电子转移化学修饰对石墨烯的电学性质的影响。

Effects of electron-transfer chemical modification on the electrical characteristics of graphene.

机构信息

Department of Physics, Graduate School of Science, Tohoku University, Sendai, Japan.

出版信息

Nanotechnology. 2010 Nov 26;21(47):475208. doi: 10.1088/0957-4484/21/47/475208. Epub 2010 Oct 29.

DOI:10.1088/0957-4484/21/47/475208
PMID:21030765
Abstract

Because of the large reactivity of single layer graphene to electron-transfer chemistries, 4-nitrobenzene diazonium tetrafluoroborate is employed to modify the electrical properties of graphene field-effect transistors. After modification, the transfer characteristics of chemically modified graphene show a reduction in the minimum conductivity, electron-hole mobility asymmetry, a decrease in the electron/hole mobility, and a positive shift of the charge neutrality point with broadening of the minimum conductivity region. These phenomena are attributed to a dediazoniation reaction and the adsorbates on the graphene surface.

摘要

由于单层石墨烯对电子转移化学反应具有很大的反应性,因此使用 4-硝基苯重氮四氟硼酸盐来修饰石墨烯场效应晶体管的电学性质。修饰后,化学修饰石墨烯的转移特性显示出最小电导率降低、电子-空穴迁移率不对称、电子/空穴迁移率降低以及电荷中性点正向移动,同时最小电导率区域变宽。这些现象归因于脱氮反应和石墨烯表面的吸附物。

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