Pham Phuong Viet
SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do 440-746, Republic of Korea.
R Soc Open Sci. 2018 May 16;5(5):172395. doi: 10.1098/rsos.172395. eCollection 2018 May.
The polymer residues still present on a chemical vapour-deposited graphene surface after its wet transfer by the poly(methyl methacrylate) method to the arbitrary substrates, tend to cause problems such as electrical degradation and unwanted intentional doping. In this study, by using an effective cleaning method for the graphene surface by air-assisted plasma, the graphene surface was cleaned significantly without damaging the graphene network, which resulted in the reduction (approx. 71.11%) of polymer residues on its surface. The analysis reveals that this approach reduced the D-band (impurities, polymer residues) formation while maintaining the π-bonding of the graphene, which affects conductivity. By characterizations of the optical microscope, Raman spectroscopy and atomic force microscopy, we obtained a significantly cleaner graphene surface (roughness of 4.1 nm) compared to pristine graphene (roughness of 1.2 nm) on a SiO substrate. In addition, X-ray photoelectron spectroscopy data revealed that the C1s peak of the air-assisted graphene film was higher than the one of a pristine graphene film, indicating that a cleaner graphene surface was obtained.
通过聚（甲基丙烯酸甲酯）法将化学气相沉积的石墨烯表面湿转移到任意衬底上后，其表面仍存在的聚合物残留往往会导致诸如电性能退化和不必要的有意掺杂等问题。在本研究中，通过使用空气辅助等离子体对石墨烯表面进行有效清洁的方法，石墨烯表面得到了显著清洁，且未破坏石墨烯网络，这使得其表面的聚合物残留减少了（约71.11%）。分析表明，这种方法减少了D带（杂质、聚合物残留）的形成，同时保持了影响导电性的石墨烯的π键。通过光学显微镜、拉曼光谱和原子力显微镜的表征，与SiO衬底上的原始石墨烯（粗糙度为1.2nm）相比，我们获得了显著更清洁的石墨烯表面（粗糙度为4.1nm）。此外，X射线光电子能谱数据显示，空气辅助石墨烯薄膜的C1s峰高于原始石墨烯薄膜的C1s峰，表明获得了更清洁的石墨烯表面。
