Lanza M, Porti M, Nafría M, Aymerich X, Whittaker E, Hamilton B
Dept. Enginyeria Electrònica, Universitat Autònoma de Barcelona, Edifici Q, 08193 Bellaterra, Spain.
Rev Sci Instrum. 2010 Oct;81(10):106110. doi: 10.1063/1.3491956.
Conductive atomic force microscopy experiments on gate dielectrics in air, nitrogen, and UHV have been compared to evaluate the impact of the environment on topography and electrical measurements. In current images, an increase of the lateral resolution and a reduction of the conductivity were observed in N(2) and, especially, in UHV (where current depends also on the contact force). Both effects were related to the reduction/elimination of the water layer between the tip and the sample in N(2)/UHV. Therefore, since current measurements are very sensitive to environmental conditions, these factors must be taken into consideration when comparisons between several experiments are performed.
已对在空气、氮气和超高真空中对栅极电介质进行的导电原子力显微镜实验进行了比较,以评估环境对形貌和电学测量的影响。在电流图像中,在氮气中,尤其是在超高真空中(电流也取决于接触力),观察到横向分辨率提高且电导率降低。这两种效应都与氮气/超高真空中尖端与样品之间水层的减少/消除有关。因此,由于电流测量对环境条件非常敏感,在进行多个实验之间的比较时,必须考虑这些因素。