多晶化对高介电常数电介质纳米级电学性质的影响。
Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics.
作者信息
Lanza Mario, Iglesias Vanessa, Porti Marc, Nafria Montse, Aymerich Xavier
机构信息
Dept, Eng, Electrònica, Edifici Q, Campus UAB, 08193 Bellaterra, Spain.
出版信息
Nanoscale Res Lett. 2011 Jan 31;6(1):108. doi: 10.1186/1556-276X-6-108.
Abstract
In this study, atomic force microscopy-related techniques have been used to investigate, at the nanoscale, how the polycrystallization of an Al2O3-based gate stack, after a thermal annealing process, affects the variability of its electrical properties. The impact of an electrical stress on the electrical conduction and the charge trapping of amorphous and polycrystalline Al2O3 layers have been also analyzed.
摘要
在本研究中，已使用与原子力显微镜相关的技术在纳米尺度上研究基于Al2O3的栅极堆叠在热退火过程后的多晶化如何影响其电学性质的可变性。还分析了电应力对非晶和多晶Al2O3层的导电和电荷俘获的影响。
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