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一种利用表面活性剂调节刻蚀纳米孔离子电流整流的方法。

A method to tune the ionic current rectification of track-etched nanopores by using surfactant.

机构信息

State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871, PR China.

出版信息

Phys Chem Chem Phys. 2011 Jan 14;13(2):576-81. doi: 10.1039/c0cp00587h. Epub 2010 Nov 1.

Abstract

A method is reported here to tune the ionic current rectification behavior through a conical nanopore fabricated with the track-etching technique. In order to change the surface charge property of the pore wall, we added the cationic surfactant hexadecyl trimethylammonium bromide (CTAB) into the working electrolyte of 0.1 M KCl. By controlling the modified region and the concentration of CTAB, the ionic current rectification degree of the nanopore could be tuned over the wide range of 0.2-65 at the voltage of ±0.9 V. The mechanism of the changes in current rectification behavior was analyzed by numerically solving the Poison-Nernst-Planck (PNP) equations.

摘要

本文报道了一种通过刻蚀技术制备的圆锥形纳米孔来调节离子电流整流行为的方法。为了改变孔壁的表面电荷性质,我们在 0.1 M KCl 的工作电解液中加入了阳离子表面活性剂十六烷基三甲基溴化铵(CTAB)。通过控制修饰区域和 CTAB 的浓度,可以在 ±0.9 V 的电压下将纳米孔的离子电流整流程度调节在 0.2-65 的宽范围内。通过数值求解泊松-纳恩斯-普朗克(PNP)方程分析了电流整流行为变化的机制。

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