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石墨烯结构中的电子-电子和电子-空穴对。

Electron-electron and electron-hole pairing in graphene structures.

机构信息

Institute of Spectroscopy, Russian Academy of Sciences, 142190 Troitsk, Moscow Region, Russia.

出版信息

Philos Trans A Math Phys Eng Sci. 2010 Dec 13;368(1932):5417-29. doi: 10.1098/rsta.2010.0224.

Abstract

The superconducting pairing of electrons in doped graphene owing to in-plane and out-of-plane phonons is considered. It is shown that the structure of the order parameter in the valley space substantially affects conditions of the pairing. Electron-hole pairing in a graphene bilayer in the strong coupling regime is also considered. Taking into account retardation of the screened Coulomb pairing potential shows a significant competition between the electron-hole direct attraction and their repulsion owing to virtual plasmons and single-particle excitations.

摘要

掺杂石墨烯中由于平面内和平面外声子引起的电子超导配对被考虑在内。结果表明,谷空间中序参量的结构对配对条件有很大的影响。还考虑了强耦合条件下双层石墨烯中的电子-空穴配对。考虑到屏蔽库仑配对势的延迟,电子-空穴的直接吸引与其由于虚拟等离子体和单粒子激发引起的排斥之间存在显著的竞争。

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