ACS Appl Mater Interfaces. 2010 Dec;2(12):3406-10. doi: 10.1021/am1007672. Epub 2010 Nov 8.
High-performance single CdS nanowire (NW) as well as nanobelt (NB) Schottky junction solar cells were fabricated. Au (5 nm)/graphene combined layers were used as the Schottky contact electrodes to the NWs (NBs). Typical as-fabricated NW solar cell shows excellent photovoltaic behavior with an open circuit voltage of ∼0.15 V, a short circuit current of ∼275.0 pA, and an energy conversion efficiency of up to ∼1.65%. The physical mechanism of the combined Schottky electrode was discussed. We attribute the prominent capability of the devices to the high-performance Schottky combined electrode, which has the merits of low series resistance, high transparency, and good Schottky contact to the CdS NW (NB). Besides, a promising site-controllable patterned graphene transfer method, which has the advantages of economizing graphene material and free from additional etching process, was demonstrated in this work. Our results suggest that semiconductor NWs (NBs) are promising materials for novel solar cells, which have potential application in integrated nano-optoelectronic systems.
高性能的单个 CdS 纳米线（NW）和纳米带（NB）肖特基结太阳能电池已经制备成功。Au（5nm）/石墨烯组合层被用作 NW（NB）的肖特基接触电极。典型的制备好的 NW 太阳能电池表现出优异的光电性能，开路电压约为 0.15V，短路电流约为 275.0pA，能量转换效率高达约 1.65%。讨论了组合肖特基电极的物理机制。我们将器件的突出性能归因于高性能的肖特基组合电极，它具有低串联电阻、高透明度和与 CdS NW（NB）良好的肖特基接触的优点。此外，本工作还展示了一种有前途的、具有节约石墨烯材料和无需额外刻蚀工艺优点的、可控制的图案化石墨烯转移方法。我们的结果表明，半导体 NW（NB）是新型太阳能电池的有前途的材料，它们在集成纳光电系统中有潜在的应用。
