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在铟锡氧化物衬底上图案化的 CdS 微阵列的制作和光电化学特性。

Fabrication and photoelectrochemical characteristics of the patterned CdS microarrays on indium tin oxide substrates.

机构信息

State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730000 China.

出版信息

ACS Appl Mater Interfaces. 2010 Dec;2(12):3467-72. doi: 10.1021/am100548w. Epub 2010 Nov 12.

Abstract

In an effort to investigate the extraordinary photoelectrochemical characteristics of nanostructured CdS thin films in promising photovoltaic device applications, the patterned CdS microarrays with different feature sizes (50, 130, and 250 μm in diameter) were successfully fabricated on indium tin oxide (ITO) glass substrates using the chemical bath deposition method. The ultraviolet lithography process was employed for fabricating patterned octadecyltrichlorosilane (OTS) self-assembled monolayers (SAMs) as the functional organic thin layer template. The results show that the regular and compact patterned CdS microarrays had been deposited onto ITO glass surfaces, with clear edges demarcating the boundaries between the patterned CdS region and substrate under an optimal depositing condition. The microarrays consisted of pure nanocrystalline CdS with average crystallite size of about 10.7 nm. The photocurrent response and the optical adsorption of the patterned CdS microarray thin films increased with the decrease of the feature size, which was due to the increased CdS surface area, as well as the increased optical path length within the patterned CdS thin films, resulting from multiple reflection of incident light. The resistivity values increase with the increase of feature size, due to the increase of the relative amount of gaps between CdS microarrays with increasing the feature size of patterned CdS microarrays.

摘要

为了研究纳米结构 CdS 薄膜在有前途的光伏器件应用中的非凡光电化学特性,我们成功地使用化学浴沉积法在铟锡氧化物(ITO)玻璃衬底上制备了具有不同特征尺寸(直径为 50、130 和 250 μm)的图案化 CdS 微阵列。采用紫外光刻工艺制备了十八烷基三氯硅烷(OTS)自组装单层(SAM)作为功能有机薄膜模板。结果表明,在最佳沉积条件下,规则且致密的图案化 CdS 微阵列已沉积到 ITO 玻璃表面,图案化 CdS 区域与衬底之间的边界有清晰的边缘。微阵列由平均晶粒尺寸约为 10.7nm 的纯纳米晶 CdS 组成。图案化 CdS 微阵列薄膜的光电流响应和光吸收随特征尺寸的减小而增加,这是由于 CdS 表面积的增加,以及由于光的多次反射,图案化 CdS 薄膜内的光程长度增加。由于图案化 CdS 微阵列的特征尺寸增大导致 CdS 微阵列之间的间隙相对量增加,因此电阻率值随特征尺寸的增大而增大。

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