State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, PR China.
J Colloid Interface Sci. 2011 Apr 15;356(2):726-33. doi: 10.1016/j.jcis.2011.01.031. Epub 2011 Jan 15.
Nano-structured CuS thin films were deposited on the functionalized -NH(2)-terminated self-assembled monolayers (SAMs) surface by chemical bath deposition (CBD). The deposition mechanism of CuS on the -NH(2)-terminated group was systematically investigated using field emission scanning electron microscope (FESEM), X-ray photoelectron spectroscope (XPS), UV-vis absorption. The optical, electrical and photoelectrochemical performance of CuS thin films incorporating with the X-ray diffraction (XRD) analysis confirmed the nanocrystalline nature of CuS with hexagonal crystal structure and also revealed that CuS thin film is a p-type semiconductor with high electrical conductivity (12.3Ω/□). The functionalized SAMs terminal group plays a key role in the deposition of CuS thin films. The growth of CuS on the varying SAMs surface shows different deposition mechanisms. On -NH(2)-terminated surfaces, a combination of ion-by-ion growth and cluster-by-cluster deposition can interpret the observed behavior. On -OH- and -CH(3)-terminated surfaces, the dominant growth mechanism on the surface is cluster-by-cluster deposition in the solution. According to this principle, the patterned CuS microarrays with different feature sizes were successfully deposited on -NH(2)-terminated SAMs regions of -NH(2)/-CH(3) patterned SAMs surface.
采用化学浴沉积法（CBD）在功能化的 -NH(2)-末端自组装单层（SAM）表面上沉积了纳米结构的 CuS 薄膜。通过场发射扫描电子显微镜（FESEM）、X 射线光电子能谱（XPS）、紫外-可见吸收光谱系统地研究了 CuS 在 -NH(2)-末端基团上的沉积机制。CuS 薄膜的光学、电学和光电化学性能与 X 射线衍射（XRD）分析相结合，证实了 CuS 具有六方晶结构的纳米晶性质，同时表明 CuS 薄膜是一种具有高电导率（12.3Ω/□）的 p 型半导体。功能化的 SAMs 末端基团在 CuS 薄膜的沉积中起着关键作用。CuS 在不同 SAMs 表面上的生长显示出不同的沉积机制。在 -NH(2)-末端表面上，离子-离子生长和团簇-团簇沉积的组合可以解释观察到的行为。在 -OH-和 -CH(3)-末端表面上，溶液中表面的主要生长机制是团簇-团簇沉积。根据这一原理，成功地在 -NH(2)/-CH(3)图案化 SAMs 表面的 -NH(2)-末端 SAMs 区域上沉积了具有不同特征尺寸的图案化 CuS 微阵列。
