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在石英纳吸管中的锥形二氧化硅纳米孔中存在依赖于扫描速率的电流整流现象。

Scan-rate-dependent current rectification of cone-shaped silica nanopores in quartz nanopipettes.

机构信息

Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, USA.

出版信息

J Am Chem Soc. 2010 Dec 8;132(48):17088-91. doi: 10.1021/ja1086497. Epub 2010 Nov 12.

Abstract

Here we report the voltammetric behavior of cone-shaped silica nanopores in quartz nanopipettes in aqueous solutions as a function of the scan rate, v. Current rectification behavior for silica nanopores with diameters in the range 4-25 nm was studied. The rectification behavior was found to be strongly dependent on the scan rate. At low scan rates (e.g., v < 1 V/s), the rectification ratio was found to be at its maximum and relatively independent of v. At high scan rates (e.g., v > 200 V/s), a nearly linear current-voltage response was obtained. In addition, the initial voltage was shown to play a critical role in the current-voltage response of cone-shaped nanopores at high scan rates. We explain this v-dependent current-voltage response by ionic redistribution in the vicinity of the nanopore mouth.

摘要

在这里,我们报告了在水溶液中石英纳流管中锥形二氧化硅纳米孔的伏安行为,作为扫描速率 v 的函数。研究了直径在 4-25nm 范围内的二氧化硅纳米孔的整流行为。发现整流行为强烈依赖于扫描速率。在低扫描速率(例如,v<1V/s)下,整流比达到最大值且与 v 相对独立。在高扫描速率(例如,v>200V/s)下,获得了近乎线性的电流-电压响应。此外,还表明在高扫描速率下,初始电压在锥形纳米孔的电流-电压响应中起着关键作用。我们通过纳米孔口附近的离子重新分布来解释这种 v 相关的电流-电压响应。

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