Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructures, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, Anhui 230031, P. R. China.
ACS Nano. 2010 Dec 28;4(12):7105-12. doi: 10.1021/nn102689z. Epub 2010 Nov 16.
Silicon, being in the same group in the periodic table as carbon, plays a key role in modern semiconductor industry. However, unlike carbon nanotube (NT), progress remains relatively slow in silicon NT (SiNT) and SiNT-based heteroarchitectures, which would be the fundamental building blocks of various nanoscale circuits, devices, and systems. Here, we report the synthesis of linear and branched crystalline SiNTs via porous anodic aluminum oxide (AAO) self-catalyzed growth and postannealing, and the connection of crystalline SiNTs and gold nanowires (AuNWs) via a combinatorial process of electrodepositing AuNWs with predesired length and location in the channels of the AAO template and subsequent AAO self-catalyzed and postannealing growth of SiNTs in the remaining empty channels adjacent to the AuNWs. Using the approach, a large variety of two-segment AuNW/SiNT and three-segment SiNT/AuNW/SiNT heteronanostructures with both linear and branched topologies have been achieved, paving the way for the rational design and fabrication of SiNT-based nanocircuits, nanodevices, and multifunctional nanosystems in the future.
硅与碳在元素周期表中属于同一族，在现代半导体工业中起着关键作用。然而，与碳纳米管（NT）不同，硅纳米管（SiNT）和基于 SiNT 的杂化结构的进展相对较慢，而 SiNT 是各种纳米级电路、器件和系统的基本构建块。在这里，我们通过多孔阳极氧化铝（AAO）自催化生长和后退火报告了线性和分支状结晶 SiNT 的合成，以及通过在 AAO 模板的通道中以所需长度和位置电沉积 AuNW 以及随后在相邻的 AuNW 的剩余空通道中进行 SiNT 的 AAO 自催化和后退火生长的组合过程连接结晶 SiNT 和金纳米线（AuNW）。使用该方法，已经实现了具有线性和分支拓扑结构的大量两种段 AuNW/SiNT 和三种段 SiNT/AuNW/SiNT 杂化纳米结构，为未来基于 SiNT 的纳米电路、纳米器件和多功能纳米系统的合理设计和制造铺平了道路。
