非晶硅衬底上硅纳米管和纳米线的低温生长。
Low-temperature growth of silicon nanotubes and nanowires on amorphous substrates.
机构信息
Max Planck Institute for Metals Research, Heisenbergstr. 3, D-70569 Stuttgart, Germany.
出版信息
ACS Nano. 2010 Apr 27;4(4):1805-12. doi: 10.1021/nn900969y.
Silicon one-dimensional (Si 1D) materials are of particular relevance due to their prospect as versatile building materials for nanoelectronic devices. We report the growth of Si 1D structures from quasi-hexagonally ordered gold (Au) nanoparticle (NP) arrays on borosilicate glass (BSG) and SiOx/Si substrates. Using hydrogen instead of oxygen plasma during NP preparation enhances the catalytic activity of AuNPs (diameters of 10-20 nm), enabling Si 1D growth at temperatures as low as 320 degrees C. On BSG, Si nanowires (SiNWs) are identified and reasonable vertical alignment is achieved at 420 degrees C. On SiOx/Si, only Si nanotubes (SiNTs) are obtained right up to 420 degrees C. A mixture of SiNTs and SiNWs is observed at 450 degrees C and only SiNWs grow at 480 degrees C.
硅一维（Si 1D）材料因其作为纳米电子器件的多功能建筑材料的前景而备受关注。我们报告了在硼硅酸盐玻璃（BSG）和 SiOx/Si 衬底上从准六边形有序金（Au）纳米颗粒（NP）阵列生长 Si 1D 结构。在 NP 制备过程中使用氢气而不是氧气等离子体可以增强 AuNPs（直径为 10-20nm）的催化活性，从而使 Si 1D 能够在低至 320°C 的温度下生长。在 BSG 上，鉴定出硅纳米线（SiNWs），并在 420°C 时实现了合理的垂直排列。在 SiOx/Si 上，仅在高达 420°C 时才能获得 Si 纳米管（SiNTs）。在 450°C 时观察到 SiNTs 和 SiNWs 的混合物，而只有 SiNWs 在 480°C 时生长。
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