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通过时间程序控制的等离子体化学气相沉积法直接生长具有窄手性分布的短单壁碳纳米管。

Direct growth of short single-walled carbon nanotubes with narrow-chirality distribution by time-programmed plasma chemical vapor deposition.

机构信息

Department of Electronic Engineering, Tohoku University, Aoba 6-6-05, Aramaki-Aza, Aoba-Ku, Sendai 980-8579, Japan.

出版信息

ACS Nano. 2010 Dec 28;4(12):7395-400. doi: 10.1021/nn102379p. Epub 2010 Nov 17.

DOI:10.1021/nn102379p
PMID:21082841
Abstract

We have realized the direct growth of the short-length (<100 nm) single-walled carbon nanotubes (SWNTs) with a narrow-chirality distribution by time-programmed plasma chemical vapor deposition (TP-PCVD). Transmission electron microscope and atomic force microscope analyses reveal that the very short (<100 nm) SWNTs are selectively grown by precisely controlling their growth time on the order of a few seconds. Direct photoluminescence excitation measurements also show that the chirality distribution of the short SWNTs is fairly narrow, and (7, 6) and (8, 4) dominant short SWNTs are successfully synthesized by TP-PCVD.

摘要

我们通过时间编程的等离子体化学气相沉积(TP-PCVD)实现了短长度(<100nm)单壁碳纳米管(SWNTs)的直接生长,其手性分布较窄。透射电子显微镜和原子力显微镜分析表明,通过精确控制生长时间(几秒钟),可以选择性地生长非常短(<100nm)的 SWNTs。直接光致发光激发测量也表明,短 SWNTs 的手性分布相当窄,并且通过 TP-PCVD 成功合成了(7,6)和(8,4)主导的短 SWNTs。

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Direct growth of short single-walled carbon nanotubes with narrow-chirality distribution by time-programmed plasma chemical vapor deposition.通过时间程序控制的等离子体化学气相沉积法直接生长具有窄手性分布的短单壁碳纳米管。
ACS Nano. 2010 Dec 28;4(12):7395-400. doi: 10.1021/nn102379p. Epub 2010 Nov 17.
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Chirality-controlled synthesis of single-wall carbon nanotubes using vapour-phase epitaxy.手性控制的气相外延法合成单壁碳纳米管。
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