Lacaita A, Zappa F, Cova S, Lovati P
Appl Opt. 1996 Jun 1;35(16):2986-96. doi: 10.1364/AO.35.002986.
Commercially available InGaAs/lnP avalanche photodiodes, designed for optical receivers and range finders, can be operated biased above the breakdown voltage, achieving single-photon sensitivity. We describe in detail how to select the device for photon-counting applications among commercial samples. Because of the high dark-counting rate the detector must be cooled to below 100 K and operated in a gated mode. We achieved a noise equivalent power of 3 × 10(-16) W/Hz(1/2) to a 1.55-µm wavelength and a time resolution well below 1 ns with a best value of 200-ps FWHM. Finally we compare these figures with the performance of state-of-the-art detectors in the near IR, and we highlight the potentials of properly designed InGaAs/lnP avalanche photodiodes in single-photon detection.
市售的用于光接收器和测距仪的铟镓砷/磷化铟雪崩光电二极管,可以在高于击穿电压的偏置条件下工作,实现单光子灵敏度。我们详细描述了如何在商业样品中选择用于光子计数应用的器件。由于暗计数率高,探测器必须冷却到100 K以下并以门控模式工作。我们在1.55微米波长下实现了3×10^(-16) W/Hz^(1/2)的噪声等效功率,时间分辨率远低于1纳秒,最佳值为200皮秒的半高宽。最后,我们将这些数据与近红外领域最先进探测器的性能进行比较,并强调了设计合理的铟镓砷/磷化铟雪崩光电二极管在单光子探测中的潜力。