Department of Chemistry, University of Mauritius, Réduit, Mauritius, School of Chemical Sciences, Universiti Sains Malaysia, 11800 Penang, Malaysia.
J Phys Chem A. 2010 Dec 23;114(50):13198-212. doi: 10.1021/jp1078955. Epub 2010 Nov 22.
A systematic investigation of the X-Ge-CY(3) (X = H, F, Cl, Br, and I; Y = F, Cl, Br, and I) species is carried out using density functional theory. The basis sets used for all atoms (except iodine) in this work are of double-ζ plus polarization quality with additional s- and p-type diffuse functions, and denoted DZP++. Vibrational frequency analyses are performed to evaluate zero-point energy corrections and to determine the nature of the stationary points located. Predicted are four different forms of neutral-anion separations: adiabatic electron affinity (EA(ad)), zero-point vibrational energy corrected EA(ad(ZPVE)), vertical electron affinity (EA(vert)), and vertical detachment energy (VDE). The electronegativity (χ) reactivity descriptor for the halogens (X = F, Cl, Br, and I) is used as a tool to assess the interrelated properties of these germylenes. The topological position of the halogen atom bound to the divalent germanium center is well correlated with the trend in the electron affinities and singlet-triplet gaps. For the expected XGeCY(3) structures (X = H, F, Cl, Br, and I; Y = F and Cl), the predicted trend in the electron affinities is well correlated with simpler germylene derivatives (J. Phys. Chem. A 2009, 113, 8080). The predicted EA(ad(ZPVE)) values with the BHLYP functional range from 1.66 eV (FGeCCl(3)) to 2.20 eV (IGeCF(3)), while the singlet-triplet splittings range from 1.28 eV (HGeCF(3)) to 2.22 eV (FGeCCl(3)). The XGeCY(3) (Y = Br and I) species are most often characterized by three-membered cyclic systems involving the divalent germanium atom, the carbon atom, and a halogen atom.
使用密度泛函理论对 X-Ge-CY(3)(X = H、F、Cl、Br 和 I;Y = F、Cl、Br 和 I)物种进行了系统研究。这项工作中除碘以外的所有原子的基组均采用双ζ加极化质量,并带有额外的 s 和 p 型弥散函数,记为 DZP++。进行振动频率分析以评估零点能修正并确定所定位的稳定点的性质。预测了中性-阴离子分离的四种不同形式:绝热电子亲合能(EA(ad))、零点振动能修正的 EA(ad(ZPVE))、垂直电子亲合能(EA(vert))和垂直离解能(VDE)。卤素(X = F、Cl、Br 和 I)的电负性(χ)反应性描述符被用作评估这些锗烯相关性质的工具。与二价锗中心键合的卤素原子的拓扑位置与电子亲合势和单重态-三重态能隙的趋势密切相关。对于预期的 XGeCY(3)结构(X = H、F、Cl、Br 和 I;Y = F 和 Cl),电子亲合势的预测趋势与更简单的锗烯衍生物很好地相关(J. Phys. Chem. A 2009, 113, 8080)。使用 BHLYP 函数预测的 EA(ad(ZPVE)) 值范围为 1.66 eV(FGeCCl(3))至 2.20 eV(IGeCF(3)),而单重态-三重态分裂范围为 1.28 eV(HGeCF(3))至 2.22 eV(FGeCCl(3))。XGeCY(3)(Y = Br 和 I)物种通常以涉及二价锗原子、碳原子和卤素原子的三原子环状体系为特征。