Nano-Electronics Centre, Advanced Technology Institute, University of Surrey, Guildford, Surrey GU2 7XH, UK.
Nanotechnology. 2010 Dec 17;21(50):505604. doi: 10.1088/0957-4484/21/50/505604. Epub 2010 Nov 23.
We report the low-temperature growth of vertically aligned carbon nanotubes (CNTs) at high growth rates by a photo-thermal chemical vapour deposition (PTCVD) technique using a Ti/Fe bilayer film as the catalyst. The bulk growth temperature of the substrate is as low as 370 °C and the growth rate is up to 1.3 µm min(-1), at least eight times faster than the values reported by traditional thermal CVD methods. Transmission electron microscopy observations reveal that as-grown CNTs are uniformly made of highly crystalline 5-6 graphene shells with an approximately 10 nm outer diameter and a 5-6 nm inner diameter. The low-temperature rapid growth of CNTs is strongly related to the unique top-down heating mode of PTCVD and the use of a Ti/Fe bimetallic solid solution catalyst. The present study will advance the development of CNTs as interconnects in nanoelectronics, through a CMOS-compatible low-temperature deposition method suitable for back-end-of-line processes.
我们报告了使用 Ti/Fe 双层膜作为催化剂通过光热化学气相沉积（PTCVD）技术在高生长速率下低温生长垂直排列的碳纳米管（CNT）。衬底的体生长温度低至 370°C，生长速率高达 1.3 µm min(-1)，至少比传统热 CVD 方法报道的值快八倍。透射电子显微镜观察表明，所生长的 CNT 均匀地由高度结晶的 5-6 个石墨烯壳组成，外直径约为 10nm，内直径为 5-6nm。CNTs 的低温快速生长与 PTCVD 的独特自上而下加热模式和使用 Ti/Fe 双金属固溶体催化剂密切相关。本研究将通过适用于后端工艺的 CMOS 兼容低温沉积方法推进 CNT 作为纳米电子学中互连的发展。
