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使用碳化硅量子点对癌细胞进行选择性杀伤

Preferential killing of cancer cells using silicon carbide quantum dots.

作者信息

Mognetti Barbara, Barberis Alessandro, Marino Silvia, Di Carlo Francesco, Lysenko Vladimir, Marty Olivier, Géloën Alain

机构信息

Opt of Clinical and Biological Sciences, University of Turin, AOU S. Luigi, 10043 Orbassano, Turin, Italy.

出版信息

J Nanosci Nanotechnol. 2010 Dec;10(12):7971-5. doi: 10.1166/jnn.2010.3049.

Abstract

Silicon carbide quantum dots are highly luminescent biocompatible nanoparticles whose properties might be of particular interest for biomedical applications. In this study we investigated Silicon Carbide Quantum Dots (3C-SiC QDs) cellular localisation and influence on viability and proliferation on oral squamous carcinoma (AT-84 and HSC) and immortalized cell lines (S-G). They clearly localize into the nuclei, but the presence of 3C-SiC QDs in culture medium provoke morphological changes in cultured cells. We demonstrate that 3C-SiC QDs display dose- and time-dependent selective cytotoxicity on cancer versus immortalized cells in vitro. Since one of the limitations of classical antineoplastic drugs is their lack of selectivity, these results open a new way in the search for antiproliferative drugs.

摘要

碳化硅量子点是具有高发光性的生物相容性纳米颗粒,其特性可能在生物医学应用中具有特殊意义。在本研究中,我们研究了碳化硅量子点(3C-SiC QDs)在口腔鳞状细胞癌(AT-84和HSC)及永生化细胞系(S-G)中的细胞定位及其对细胞活力和增殖的影响。它们明显定位于细胞核中,但培养基中3C-SiC QDs的存在会引起培养细胞的形态变化。我们证明,3C-SiC QDs在体外对癌细胞与永生化细胞显示出剂量和时间依赖性的选择性细胞毒性。由于传统抗肿瘤药物的局限性之一是缺乏选择性,这些结果为寻找抗增殖药物开辟了一条新途径。

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