Lian Jia-rong, Liao Qiao-sheng, Yang Rui-bo, Zheng Wei, Zeng Peng-ju
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education, Shenzhen University, Shenzhen, China.
Guang Pu Xue Yu Guang Pu Fen Xi. 2010 Oct;30(10):2616-9.
The dependence of opto-electronical characteristics in organic light-emitting devices on the thickness of Alq3 emitter layer was studied, where MoO3, NPB, and Alq3 were used as hole injector, hole transporter, and emitter/electron transporter, respectively. By increasing the thickness of Alq3 layer from 20 to 100 nm, the device current decreased gradually, and the EL spectra of devices performed a little red shift with an obvious broadening in long wavelength range but a little decrease in intensity of short wavelength range. The authors simulated the EL spectra using the photoluminescence (PL) spectra of Alq3 as Alq3 intrinsic emission, which coincided with the experimental EL spectra well. The simulated results suggested that the effect of interference takes the major role in broadening the long wavelength range of EL spectra, and the distribution of emission zone largely affects the profile of EL spectra in short wavelength range.
研究了有机发光器件中光电特性对Alq3发射层厚度的依赖性，其中分别使用MoO3、NPB和Alq3作为空穴注入层、空穴传输层以及发射/电子传输层。通过将Alq3层的厚度从20 nm增加到100 nm，器件电流逐渐降低，器件的电致发光（EL）光谱出现轻微红移，长波长范围明显展宽，短波长范围强度略有下降。作者使用Alq3的光致发光（PL）光谱作为Alq3本征发射来模拟EL光谱，模拟结果与实验EL光谱吻合良好。模拟结果表明，干涉效应在展宽EL光谱的长波长范围中起主要作用，发射区的分布在很大程度上影响短波长范围EL光谱的轮廓。
