沉积在多孔硅上的纳米WO₃薄膜的NH₃传感特性。

NH3 sensing characteristics of nano-WO3 thin films deposited on porous silicon.

作者信息

Sun Fengyun, Hu Ming, Sun Peng, Zhang Jie, Liu Bo

机构信息

Sensitive Materials and Sensros Lab, School of Electronic and Information Engineering, Tianjin University, Tianjin, 300072, P. R. China.

出版信息

J Nanosci Nanotechnol. 2010 Nov;10(11):7739-42. doi: 10.1166/jnn.2010.2815.

DOI:10.1166/jnn.2010.2815

PMID:21138022

Abstract

The NH3 sensing characteristics of nano-tungsten trioxide (WO3) thin films deposited on porous silicon (PS) were investigated in the present study. Porous silicon layer was first prepared by electrochemical etching in an HF-based solution on a p(+)-type silicon substrate. Then, WO3 nano-films were deposited on the porous silicon layer by DC magnetron sputtering. Pt electrodes were deposited on the top surface of the WO3 films to obtain the WO3/PS gas sensor. The WO3 films deposited on PS were characterized by SEM, XRD and XPS. The NH3 sensing characteristics for WO3/PS gas sensor were tested at room temperature and 50 degrees C. The results showed that the NH3 sensing characteristics of WO3/PS were superior to WO3/Al2O3 at room temperature. The sensing mechanism of the nano-WO3 thin films based on PS was also discussed.

摘要

本研究对沉积在多孔硅（PS）上的纳米三氧化钨（WO₃）薄膜的NH₃传感特性进行了研究。首先在p（+）型硅衬底上通过在基于HF的溶液中进行电化学蚀刻制备多孔硅层。然后，通过直流磁控溅射在多孔硅层上沉积WO₃纳米薄膜。在WO₃薄膜的顶表面沉积Pt电极以获得WO₃/PS气体传感器。通过扫描电子显微镜（SEM）、X射线衍射（XRD）和X射线光电子能谱（XPS）对沉积在PS上的WO₃薄膜进行了表征。在室温及50℃下测试了WO₃/PS气体传感器的NH₃传感特性。结果表明，室温下WO₃/PS的NH₃传感特性优于WO₃/Al₂O₃。还讨论了基于PS的纳米WO₃薄膜的传感机制。