Sun Fengyun, Hu Ming, Sun Peng, Zhang Jie, Liu Bo
Sensitive Materials and Sensros Lab, School of Electronic and Information Engineering, Tianjin University, Tianjin, 300072, P. R. China.
J Nanosci Nanotechnol. 2010 Nov;10(11):7739-42. doi: 10.1166/jnn.2010.2815.
The NH3 sensing characteristics of nano-tungsten trioxide (WO3) thin films deposited on porous silicon (PS) were investigated in the present study. Porous silicon layer was first prepared by electrochemical etching in an HF-based solution on a p(+)-type silicon substrate. Then, WO3 nano-films were deposited on the porous silicon layer by DC magnetron sputtering. Pt electrodes were deposited on the top surface of the WO3 films to obtain the WO3/PS gas sensor. The WO3 films deposited on PS were characterized by SEM, XRD and XPS. The NH3 sensing characteristics for WO3/PS gas sensor were tested at room temperature and 50 degrees C. The results showed that the NH3 sensing characteristics of WO3/PS were superior to WO3/Al2O3 at room temperature. The sensing mechanism of the nano-WO3 thin films based on PS was also discussed.
本研究对沉积在多孔硅（PS）上的纳米三氧化钨（WO₃）薄膜的NH₃传感特性进行了研究。首先在p（+）型硅衬底上通过在基于HF的溶液中进行电化学蚀刻制备多孔硅层。然后，通过直流磁控溅射在多孔硅层上沉积WO₃纳米薄膜。在WO₃薄膜的顶表面沉积Pt电极以获得WO₃/PS气体传感器。通过扫描电子显微镜（SEM）、X射线衍射（XRD）和X射线光电子能谱（XPS）对沉积在PS上的WO₃薄膜进行了表征。在室温及50℃下测试了WO₃/PS气体传感器的NH₃传感特性。结果表明，室温下WO₃/PS的NH₃传感特性优于WO₃/Al₂O₃。还讨论了基于PS的纳米WO₃薄膜的传感机制。
