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由短期加热引起的光系统 II 天线的变化。

Changes in antenna of photosystem II induced by short-term heating.

机构信息

Institute of Plant Physiology, National Academy of Sciences of Ukraine, Vasylkivska Str. 31/17, Kiev, Ukraine.

出版信息

Photosynth Res. 2010 Dec;106(3):239-46. doi: 10.1007/s11120-010-9599-8. Epub 2010 Dec 8.

Abstract

Changes in antenna of photosystem II, induced by short-term heating, were studied using characteristics of a short-wavelength band in low-temperature fluorescence spectra (77 K) of pea chloroplasts. Heating for 5 min was carried out at 25 and 45°C in the darkness or in the presence of white light with intensity of 260 or 1,400 μmol/m(2)s. Most modes of thermal treating induced a decrease in integral intensity of the band and an increase of its half-width. The changes were more prominent at high-temperature heating. The second derivative of the contour of a short-wavelength band showed its three components around 680, 685, and 693 nm, the first of which belongs to emission of the outer antenna of Photosystem II, and the other two to its inner antenna. As the fourth derivative shows, high-temperature heating in the presence of light evokes an appearance of some additional components in a short-wavelength region (654, 658, 661, 666, 672, and 675 nm) as well as of two additional components, 682 and 689 nm, in the region of 685-nm peak. Two subcomponents, 692 and 694 nm, can be detected in the 693-nm component. The results are discussed on the basis of the data concerning energy levels and pathways of energy transfer in pigment-protein complexes of the outer and the inner antennas of photosystem II. It is assumed that a protective role of low light relates to inducing of an essential disarrangement in the outer and the inner antennas and of a subsequent decrease in energy funneling to reaction centers, which, in turn, lowers the extent of photoinhibition.

摘要

采用低温荧光光谱(77 K)中短波带的特性研究了由短期加热引起的光系统 II 天线的变化,该特性来自豌豆叶绿体。在黑暗或 260 或 1400 μmol/m(2)s 强度的白光下,在 25 和 45°C 下加热 5 分钟。大多数热处理模式都会降低带的积分强度并增加其半宽度。在高温加热时,变化更为明显。短波带轮廓的二阶导数显示其在 680、685 和 693nm 左右有三个组成部分,第一个组成部分属于光系统 II 外天线的发射,另外两个组成部分属于其内天线。如四阶导数所示,在光照下的高温加热会在短波区域(654、658、661、666、672 和 675nm)以及 685nm 峰区域出现一些额外的组成部分,以及 682 和 689nm 的两个额外组成部分。在 693nm 组成部分中可以检测到两个亚组成部分 692 和 694nm。这些结果是基于色素-蛋白复合物中外天线和内天线的能量水平和能量转移途径的数据进行讨论的。假设低光照的保护作用与外天线和内天线的基本混乱以及随后的能量向反应中心的减少有关,这反过来又降低了光抑制的程度。

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