State Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing, People's Republic of China.
Nanotechnology. 2011 Jan 21;22(3):035302. doi: 10.1088/0957-4484/22/3/035302. Epub 2010 Dec 9.
We present an approach to fabricate a silicon nanowire relying on the proximity effect in electron beam lithography with a low acceleration voltage system by designing the exposure patterns with a rhombus sandwiched between two symmetric wedges. The reproducibility is investigated by changing the number of rhombuses. A device with a silicon nanowire is constructed on a highly doped silicon-on-insulator wafer to measure the electronic transport characteristics. Significant nonlinear behavior of current-voltage curves is observed at up to 150 K. The dependence of current on the drain voltage and back-gate voltage shows Coulomb blockade oscillations at 5.4 K, revealing a Coulomb island naturally formed in the nanowire. The mechanism of formation of the Coulomb island is discussed.
我们提出了一种在低加速电压电子束光刻中利用近场效应制备硅纳米线的方法，通过设计具有夹在两个对称楔形物之间的菱形的曝光图案。通过改变菱形的数量来研究重现性。在高掺杂的绝缘体上硅晶圆上构建具有硅纳米线的器件，以测量电子输运特性。在高达 150 K 的温度下，观察到电流-电压曲线的显著非线性行为。在 5.4 K 时，电流对漏极电压和背栅电压的依赖性显示出库仑阻塞振荡，揭示了纳米线中自然形成的库仑岛。讨论了库仑岛形成的机制。
