Institute for Solid State Electronics, Vienna University of Technology, Vienna, Austria.
Nanotechnology. 2011 Jan 21;22(3):035201. doi: 10.1088/0957-4484/22/3/035201. Epub 2010 Dec 9.
In this work, we demonstrate an approach to tune the electrical behavior of our Ω-gated germanium-nanowire (Ge-NW) MOSFETs by focused ion beam (FIB) implantation. For the MOSFETs, 35 nm thick Ge-NWs are covered by atomic layer deposition (ALD) of a high-κ gate dielectric. With the Ω-shaped metal gate acting as implantation mask, highly doped source/drain (S/D) contacts are formed in a self-aligned process by FIB implantation. Notably, without any dopant activation by annealing, the devices exhibit more than three orders of magnitude higher I(ON) currents, an improved I(ON)/I(OFF) ratio, a higher mobility and a reduced subthreshold slope of 140 mV/decade compared to identical Ge-NW MOSFETs without FIB implantation.
在这项工作中，我们展示了一种通过聚焦离子束 (FIB) 注入来调整我们的 Ω 门控锗纳米线 (Ge-NW) MOSFET 电性能的方法。对于 MOSFET，35nm 厚的 Ge-NWs 被原子层沉积 (ALD) 的高κ栅介质覆盖。通过 Ω 形金属门作为注入掩模，通过 FIB 注入在自对准工艺中形成高掺杂源/漏 (S/D) 接触。值得注意的是，在没有任何退火激活掺杂的情况下，与没有 FIB 注入的相同 Ge-NW MOSFET 相比，器件表现出高出三个数量级的 I(ON)电流、改善的 I(ON)/I(OFF) 比、更高的迁移率和 140mV/decade 的减小的亚阈值斜率。
