Yin Yiheng, Zhang Zhaofu, Zhong Hongxia, Shao Chen, Wan Xuhao, Zhang Can, Robertson John, Guo Yuzheng
School of Electrical and Automation, Wuhan University, Wuhan, Hubei 430072, China.
Department of Engineering, University of Cambridge, Cambridge CB2 1PZ, United Kingdom.
ACS Appl Mater Interfaces. 2021 Jan 20;13(2):3387-3396. doi: 10.1021/acsami.0c18767. Epub 2021 Jan 6.
The nanowire (NW) and gate-all-around (GAA) technologies are regarded as the ultimate solutions to sustain Moore's law benefitting from the exceptional gate control ability. Herein, we conduct a comprehensive ab initio quantum transportation calculation at different diameters (single trigonal-tellurium NW (1Te) and three trigonal-tellrium NW (3Te)) sub-5 nm tellurium (Te) GAA NW metal-oxide-semiconductor field-effect transistors (MOSFETs). The results claim that the performance of 1Te FETs is superior to that of 3Te FETs. Encouragingly, the single Te (1Te) n-type MOSFET with 5 nm gate length achieves International Technology Roadmap for Semiconductors (ITRS) high-performance (HP) and low-dissipation (LP) goals simultaneously. Especially, the HP on-state current reaches 6479 μA/μm, 7 times higher than the goal (900 μA/μm). Moreover, the subthreshold swing of the n-type 1Te FETs even hits a thermionic limit of 60 mV/dec. In terms of the spin-orbit coupling effect, the drain currents of devices are further improved, particularly the p-type Te FETs can also achieve the ITRS HP goal. Hence, the GAA Te MOSFETs provide a feasible approach for state-of-the-art sub-5 nm device applications.
纳米线（NW）和全栅极（GAA）技术因其卓越的栅极控制能力，被视为延续摩尔定律的终极解决方案。在此，我们对不同直径（单根三角碲纳米线（1Te）和三根三角碲纳米线（3Te））的亚5纳米碲（Te）全栅极纳米线金属氧化物半导体场效应晶体管（MOSFET）进行了全面的从头算量子输运计算。结果表明，1Te场效应晶体管的性能优于3Te场效应晶体管。令人鼓舞的是，栅极长度为5纳米的单根碲（1Te）n型MOSFET同时实现了国际半导体技术路线图（ITRS）的高性能（HP）和低功耗（LP）目标。特别是，HP导通状态电流达到6479μA/μm，比目标值（900μA/μm）高出7倍。此外，n型1Te场效应晶体管的亚阈值摆幅甚至达到了60mV/dec的热电子极限。就自旋轨道耦合效应而言，器件的漏极电流进一步提高，特别是p型碲场效应晶体管也能实现ITRS的HP目标。因此，全栅极碲MOSFET为最先进的亚5纳米器件应用提供了一种可行的方法。
