International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan.
ACS Nano. 2011 Jan 25;5(1):500-6. doi: 10.1021/nn102346b. Epub 2010 Dec 16.
Realization of logic circuits in graphene with an energy gap (EG) remains one of the main challenges for graphene electronics. We found that large transport EGs (>100 meV) can be fulfilled in dual-gated bilayer graphene underneath a simple alumina passivation top gate stack, which directly contacts the graphene channels without an inserted buffer layer. With the presence of EGs, the electrical properties of the graphene transistors are significantly enhanced, as manifested by enhanced on/off current ratio, subthreshold slope, and current saturation. For the first time, complementary-like semiconducting logic graphene inverters are demonstrated that show a large improvement over their metallic counterparts. This result may open the way for logic applications of gap-engineered graphene.
在具有能隙（EG）的石墨烯中实现逻辑电路仍然是石墨烯电子学的主要挑战之一。我们发现，在简单的氧化铝钝化顶栅堆叠下的双层栅双层石墨烯中可以实现大的传输 EG（>100meV），该堆叠直接接触石墨烯沟道，而没有插入缓冲层。由于存在 EG，石墨烯晶体管的电特性得到了显著增强，表现为增强的导通/关断电流比、亚阈值斜率和电流饱和。首次展示了类似互补的半导体逻辑石墨烯逆变器，与金属对应物相比有了很大的改进。这一结果可能为具有间隙工程的石墨烯的逻辑应用开辟道路。
