Aix-Marseille Université, IM2NP, France.
Phys Chem Chem Phys. 2011 Feb 21;13(7):2870-9. doi: 10.1039/c0cp01382j. Epub 2010 Dec 16.
In this work, we have studied the growth of self-assembled monolayers (SAMs) on silicon dioxide (SiO(2)) made of various long alkyltrichlorosilane chains (16, 18, 20, 24, and 30 carbon atoms in the alkyl chain), at several values of temperature (11 and 20 °C in most cases) and relative humidity (18 and 45% RH). Using atomic force microscopy analysis, thickness measurements by ellipsometry, and contact angle measurements, we have built a model of growth behaviour of SAMs of those molecules according to the deposition conditions and the chain length. Particularly, this work brings not only a better knowledge of the less studied growth of triacontyltrichlorosilane (C(30)H(61)SiCl(3)) SAMs but also new results on SAMs of tetracosyltrichlorosilane (C(24)H(49)SiCl(3)) that have not already been studied to our knowledge. We have shown that the SAM growth behaviour of triacontyltrichlorosilane at 20 °C and 45% RH is similar to that obtained at 11 °C and 45% RH for shorter molecules of hexadecyltrichlorosilane (C(16)H(33)SiCl(3)), octadecyltrichlorosilane (C(18)H(37)SiCl(3)), eicosyltrichlorosilane (C(20)H(41)SiCl(3)) and tetracosyltrichlorosilane (C(24)H(49)SiCl(3)). We have also observed that the monolayers grow faster at 45% than at 18% RH, and surprisingly slower at 20 °C than at 11 °C. Another important result is that the growth time constant decreases with the number of carbon atoms in the alkyl chain except for C(24)H(49)SiCl(3) at 11 °C and 18% RH, and for C(30)H(61)SiCl(3). To our knowledge, such a chain length dependence of the growth time constant has never been reported. The latter and all the other results are interpreted by adapting a diffusion limited aggregation growth model.
在这项工作中,我们研究了由各种长链烷基三氯硅烷(烷基链中含有 16、18、20、24 和 30 个碳原子)组成的二氧化硅(SiO(2))上自组装单层(SAMs)的生长情况,在几个温度值(大多数情况下为 11 和 20°C)和相对湿度(18 和 45%RH)下进行。通过原子力显微镜分析、椭圆偏振法厚度测量和接触角测量,我们根据沉积条件和链长构建了这些分子的 SAM 生长行为模型。特别是,这项工作不仅提供了对三癸基三氯硅烷(C(30)H(61)SiCl(3))SAMs 生长的更好了解,还提供了关于我们所知尚未研究过的二十四烷基三氯硅烷(C(24)H(49)SiCl(3))SAMs 的新结果。我们表明,在 20°C 和 45%RH 下,三癸基三氯硅烷的 SAM 生长行为与在 11°C 和 45%RH 下较短的十六烷基三氯硅烷(C(16)H(33)SiCl(3))、十八烷基三氯硅烷(C(18)H(37)SiCl(3))、二十烷基三氯硅烷(C(20)H(41)SiCl(3))和二十四烷基三氯硅烷(C(24)H(49)SiCl(3))获得的生长行为相似。我们还观察到,在 45%RH 下,单层的生长速度比在 18%RH 下更快,而在 20°C 下比在 11°C 下更慢。另一个重要的结果是,生长时间常数随烷基链中的碳原子数而减小,除了在 11°C 和 18%RH 下的 C(24)H(49)SiCl(3)和 C(30)H(61)SiCl(3)。据我们所知,这种生长时间常数对链长的依赖性以前从未有过报道。后一个和所有其他结果都通过适应扩散限制聚集生长模型进行了解释。