Dong Po, Liao Shirong, Liang Hong, Shafiiha Roshanak, Feng Dazeng, Li Guoliang, Zheng Xuezhe, Krishnamoorthy Ashok V, Asghari Mehdi
Kotura Inc., 2630 Corporate Place, Monterey Park, CA 91754, USA.
Opt Express. 2010 Nov 22;18(24):25225-31. doi: 10.1364/OE.18.025225.
We present a broadband 2x2 electro-optic silicon switch with an ultralow switching power and fast switching time based on a Mach-Zehnder interferometer (MZI). Forward-biased p-i-n junctions are employed to tune the phase of silicon waveguides in the MZI, to achieve a π-phase switching power of 0.6 mW with a drive voltage 0.83 V with a MZI arm length of 4 mm. The 10%-90% switching time is demonstrated to be 6 ns. Optical crosstalk levels lower than -17 dB are obtained for an optical bandwidth of 60 nm. The free carrier induced silicon refractive index change is extracted from the experimental results for the concentration range from 10(16) to 10(17) cm(-3). We find that at the concentration of 10(16) cm(-3), the index change is about twice that calculated by the commonly used index change equation.
我们展示了一种基于马赫-曾德尔干涉仪（MZI）的具有超低开关功率和快速开关时间的宽带2×2电光硅开关。采用正向偏置的p-i-n结来调节MZI中硅波导的相位，在MZI臂长为4 mm时，驱动电压为0.83 V，实现了0.6 mW的π相开关功率。10%-90%的开关时间被证明为6 ns。对于60 nm的光学带宽，获得了低于-17 dB的光学串扰水平。从10(16)至10(17) cm(-3)浓度范围内的实验结果中提取了自由载流子引起的硅折射率变化。我们发现，在10(16) cm(-3)的浓度下，折射率变化约为常用折射率变化方程计算值的两倍。
