Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, 33720 Tampere, Finland.
Opt Lett. 2010 Dec 15;35(24):4090-2. doi: 10.1364/OL.35.004090.
We report on a passively mode-locked optically pumped GaSb-based semiconductor disk laser producing stable picosecond optical pulses at a 1.95 μm wavelength. The gain mirror was comprised of a 15 quantum well InGaSb/GaSb structure. A fast semiconductor saturable absorber mirror with three InGaSb/GaSb quantum wells was used to attain self-starting mode-locked operation at a fundamental repetition rate of 881.2 MHz. The laser produced pulses with 30 pJ energy and a duration of 1.1 ps within a factor of 2 of the Fourier limit.
我们报告了一种被动锁模的光泵浦 GaSb 基半导体盘片激光器，它在 1.95 μm 波长下产生稳定的皮秒光脉冲。增益镜由一个 15 量子阱 InGaSb/GaSb 结构组成。一个具有三个 InGaSb/GaSb 量子阱的快速半导体可饱和吸收镜用于在基本重复率为 881.2 MHz 的情况下实现自启动锁模操作。该激光器在傅里叶极限的 2 倍以内产生了 30 pJ 能量和 1.1 ps 持续时间的脉冲。
