Opt Lett. 2018 Jul 15;43(14):3353-3356. doi: 10.1364/OL.43.003353.
Mode locking of a 1.34 μm vertical external cavity surface emitting laser is demonstrated using a GaSb-based semiconductor saturable absorber mirror (SESAM). The SESAM includes six AlGaSb quantum wells (QWs) with an absorption edge at ∼1.37 μm. The proposed approach has two key benefits: the QWs can be grown lattice matched, and only a small number of Bragg reflector layers is required to provide high reflectivity. Pump-probe measurements also reveal that the AlGaSb/GaSb structure exhibits an intrinsically fast absorption recovery on a picosecond timescale. The mode-locked laser pulse train had a fundamental repetition rate of 1.03 GHz, a pulse duration of ∼5 ps, and a peak power of ∼1.67 W. The demonstration paves the way for exploiting GaSb-based SESAMs for mode locking in the 1.3-2 μm wavelength range, which is not sufficiently addressed by GaAs and InP material systems.
利用基于 GaSb 的半导体可饱和吸收镜 (SESAM) 实现了 1.34 μm 垂直外腔面发射激光器的锁模。SESAM 包括六个具有约 1.37 μm 吸收边缘的 AlGaSb 量子阱 (QW)。该方法有两个关键优点：QW 可以晶格匹配生长，并且仅需要少量布拉格反射器层即可提供高反射率。泵浦探测测量还表明，AlGaSb/GaSb 结构在皮秒时间尺度上表现出固有快速吸收恢复。锁模激光脉冲串的基频重复率为 1.03 GHz，脉冲持续时间约为 5 ps，峰值功率约为 1.67 W。该演示为在 1.3-2 μm 波长范围内利用 GaSb 基 SESAM 进行锁模铺平了道路，这在 GaAs 和 InP 材料系统中没有得到充分解决。
