Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea.
Nanotechnology. 2011 Jan 28;22(4):045706. doi: 10.1088/0957-4484/22/4/045706. Epub 2010 Dec 20.
Large-area graphene films, synthesized by the chemical vapor deposition (CVD) method, have the potential to be used as electrodes. However, the electrical properties of CVD-synthesized graphene films fall short of the best results obtained for graphene films prepared by other methods. Therefore, it is important to understand the reason why these electrical properties are inferior to improve the applicability of CVD-grown graphene films. Here, we show that CVD-grown graphene films on nickel substrates contain many small-base-area (SBA) peaks that scatter conducting electrons, thereby decreasing the Hall mobility of charges in the films. These SBA peaks were induced by small peaks on the nickel surface and are likely composed of amorphous carbon. The formation of these SBA peaks on graphene films was successfully suppressed by controlling the surface morphology of the nickel substrate. These findings may be useful for the development of a CVD synthesis method that is capable of producing better quality graphene films with large areas.
大面积石墨烯薄膜可以通过化学气相沉积（CVD）方法合成，有望用作电极。然而，CVD 合成的石墨烯薄膜的电学性能不如其他方法制备的石墨烯薄膜的最佳结果。因此，了解这些电性能较差的原因对于提高 CVD 生长石墨烯薄膜的适用性非常重要。在这里，我们表明镍衬底上的 CVD 生长石墨烯薄膜包含许多散射传导电子的小基面（SBA）峰，从而降低了薄膜中电荷的霍尔迁移率。这些 SBA 峰是由镍表面上的小峰引起的，可能由非晶碳组成。通过控制镍基底的表面形貌，可以成功抑制石墨烯薄膜上这些 SBA 峰的形成。这些发现可能有助于开发能够生产具有大面积的高质量石墨烯薄膜的 CVD 合成方法。
