Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, USA.
ACS Nano. 2011 Sep 27;5(9):7198-204. doi: 10.1021/nn202012m. Epub 2011 Aug 5.
We demonstrate the synthesis of large-area graphene on Co, a complementary metal-oxide-semiconductor (CMOS)-compatible metal, using acetylene (C(2)H(2)) as a precursor in a chemical vapor deposition (CVD)-based method. Cobalt films were deposited on SiO(2)/Si, and the influence of Co film thickness on monolayer graphene growth was studied, based on the solubility of C in Co. The surface area coverage of monolayer graphene was observed to increase with decreasing Co film thickness. A thorough Raman spectroscopic analysis reveals that graphene films, grown on an optimized Co film thickness, are principally composed of monolayer graphene. Transport properties of monolayer graphene films were investigated by fabrication of back-gated graphene field-effect transistors (GFETs), which exhibited high hole and electron mobility of ∼1600 cm(2)/V s and ∼1000 cm(2)/V s, respectively, and a low trap density of ∼1.2 × 10(11) cm(-2).
我们展示了使用乙炔（C（2）H（2））作为前驱体在化学气相沉积（CVD）方法中在 Co 上合成大面积石墨烯的方法，Co 是一种互补金属氧化物半导体（CMOS）兼容金属。将 Co 薄膜沉积在 SiO（2）/Si 上，并根据 C 在 Co 中的溶解度研究了 Co 薄膜厚度对单层石墨烯生长的影响。观察到单层石墨烯的表面积覆盖率随 Co 薄膜厚度的减小而增加。通过制造背栅石墨烯场效应晶体管（GFET）对单层石墨烯薄膜的传输性能进行了深入的拉曼光谱分析，结果表明，在优化的 Co 薄膜厚度下生长的石墨烯薄膜主要由单层石墨烯组成。GFET 表现出约 1600 cm（2）/V s 和约 1000 cm（2）/V s 的高空穴和电子迁移率，以及约 1.2×10（11）cm（-2）的低陷阱密度。
