Shafi M, Mari R H, Khatab A, Taylor D, Henini M
School of Physics and Astronomy, Nottingham Nanotechnology & Nanoscience Centre, University of Nottingham, Nottingham, NG7 2RD UK.
Nanoscale Res Lett. 2010 Nov 16;5(12):1948-51. doi: 10.1007/s11671-010-9820-x.
Si-doped GaAs/AlGaAs multi-quantum wells structures grown by molecular beam epitaxy on (100) and (311)B GaAs substrates have been studied by using conventional deep-level transient spectroscopy (DLTS) and high-resolution Laplace DLTS techniques. One dominant electron-emitting level is observed in the quantum wells structure grown on (100) plane whose activation energy varies from 0.47 to 1.3 eV as junction electric field varies from zero field (edge of the depletion region) to 4.7 × 10(6) V/m. Two defect states with activation energies of 0.24 and 0.80 eV are detected in the structures grown on (311)B plane. The E(c)-0.24 eV trap shows that its capture cross-section is strongly temperature dependent, whilst the other two traps show no such dependence. The value of the capture barrier energy of the trap at E(c)-0.24 eV is 0.39 eV.
利用传统的深能级瞬态谱（DLTS）和高分辨率拉普拉斯DLTS技术，对通过分子束外延生长在（100）和（311）B 砷化镓衬底上的硅掺杂砷化镓/铝镓砷多量子阱结构进行了研究。在生长于（100）面的量子阱结构中观察到一个主要的电子发射能级，当结电场从零场（耗尽区边缘）变化到4.7×10⁶ V/m时，其激活能在0.47至1.3 eV之间变化。在生长于（311）B面的结构中检测到两个激活能分别为0.24和0.80 eV的缺陷态。E(c)-0.24 eV陷阱表明其俘获截面强烈依赖于温度，而另外两个陷阱则没有这种依赖性。E(c)-0.24 eV陷阱的俘获势垒能量值为0.39 eV。
