（Ga,Mn）N 纳米线的结构和元素分布。

Structure and elemental distribution of (Ga,Mn)N nanowires.

机构信息

IV Physikalisches Institut, Georg-August-Universität Göttingen, Göttingen, Germany.

出版信息

Nano Lett. 2011 Feb 9;11(2):398-401. doi: 10.1021/nl1030002. Epub 2010 Dec 20.

Abstract

(Ga,Mn)N nanowires were grown by plasma-assisted molecular beam epitaxy on p-type Si(111) substrates. Chemical composition and elemental distribution of single nanowires were analyzed by energy dispersive X-ray spectroscopy revealing an inhomogeneous Mn distribution decreasing from the surface of the nanowires toward the inner core region. The average Mn concentration within the nanowires is found to be below 1%. High-resolution transmission electron microscopy shows the presence of planar defects perpendicular to the growth direction in undoped and Mn-doped GaN nanowires. The density of planar defects dramatically increases under Mn supply.

摘要

（Ga，Mn）N 纳米线通过等离子体辅助分子束外延在 p 型 Si（111）衬底上生长。通过能谱分析对单根纳米线的化学组成和元素分布进行了分析，结果表明 Mn 分布不均匀，从纳米线表面向芯部逐渐减少。纳米线内的平均 Mn 浓度被发现低于 1%。高分辨率透射电子显微镜显示，在未掺杂和 Mn 掺杂 GaN 纳米线中存在垂直于生长方向的面内位错。在 Mn 供应下，面内位错的密度显著增加。