Westover Tyler, Jones Reese, Huang J Y, Wang George, Lai Elaine, Talin A Alec
Sandia National Laboratories, Livermore, California 94550, and Sandia National Laboratories, Albuquerque, New Mexico 87185, USA.
Nano Lett. 2009 Jan;9(1):257-63. doi: 10.1021/nl802840w.
Thermal transport and breakdown in Joule-heated GaN nanowires is investigated using a combination of microphotoluminescence and in situ TEM characterization. The thermal conductivity of the nanowires is estimated to be <80 W/m.K, which is substantially below the bulk GaN value. Catastrophic breakdown in individual nanowires is observed to occur at a maximum temperature of approximately 1000 K, and nanowire morphology near the breakdown region indicates that failure occurs via thermal decomposition, a conclusion that is validated by in situ TEM images obtained during the failure process.
利用微光致发光和原位透射电子显微镜表征相结合的方法，研究了焦耳加热氮化镓纳米线中的热传输和击穿现象。纳米线的热导率估计小于80W/m·K，这大大低于块状氮化镓的值。观察到单个纳米线在最高温度约1000K时发生灾难性击穿，击穿区域附近的纳米线形态表明失效是通过热分解发生的，这一结论在失效过程中获得的原位透射电子显微镜图像中得到了验证。
