Molecular Foundry, Lawrence Berkeley National Lab, Berkeley, California 94720, United States.
ACS Nano. 2011 Jan 25;5(1):551-7. doi: 10.1021/nn102604g. Epub 2010 Dec 20.
Using a self-energy corrected scattering-state approach based on density functional theory (DFT), we explain recent measurements of the thermopower or the Seebeck coefficient, S, for oligophenyldiamine-gold single-molecule junctions and show that they are consistent with separate measurements of their electrical conductance, G. Our calculations with self-energy corrections to the DFT electronic states in the junction predict low-bias S and G values in good quantitative agreement with experiments. We find S varies linearly with the number of phenyls N, with a gradient β(S) of 2.1 μV/K, in excellent agreement with experiment. In contrast, DFT calculations without self-energy corrections overestimate both S and β(S) (with a DFT value for β(S) three times too large). While β(S) is found to be a robust quantity independent of junction geometry, the computed values of S show significant sensitivity to the contact atomic structure-more so than the computed values of G. This observation is consistent with the experimentally measured spreads in S and G for amine-Au junctions. Taken together with previous computations of the electrical conductance (as reported in Quek, S. Y.; et al., Nano Lett. 2009, 9, 3949), our calculations of S conclusively demonstrate, for the first time, the consistency of two complementary yet distinct measurements of charge transport through single-molecule junctions and substantiate the need for an accurate treatment of junction electronic level alignment to describe off-resonant tunneling in these junctions.
利用基于密度泛函理论(DFT)的自能修正散射态方法,我们解释了最近对寡聚苯二胺-金单分子结的热功率或塞贝克系数 S 的测量,并表明它们与对其电导 G 的单独测量一致。我们用对结处 DFT 电子态的自能修正进行的计算预测了低偏置 S 和 G 值,与实验结果非常吻合。我们发现 S 与苯环数 N 呈线性变化,斜率β(S)为 2.1 μV/K,与实验结果非常吻合。相比之下,没有自能修正的 DFT 计算高估了 S 和β(S)(DFT 计算出的β(S)值是实验值的三倍)。尽管β(S)被发现是一个与结几何形状无关的稳健量,但计算出的 S 值对接触原子结构的敏感性很大,比计算出的 G 值更敏感。这一观察结果与胺-Au 结的 S 和 G 测量值的实验测量值相一致。结合之前对电导的计算(Quek,S.Y.等人,Nano Lett. 2009,9,3949),我们对 S 的计算首次一致地证明了通过单分子结进行电荷传输的两种互补但不同的测量的一致性,并证实需要对结电子能级对准进行准确处理来描述这些结中的非共振隧穿。