Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, California 94720, USA.
Nano Lett. 2011 Feb 9;11(2):385-90. doi: 10.1021/nl102988w. Epub 2010 Dec 21.
Monolithic integration of III-V compound semiconductor devices with silicon CMOS integrated circuits has been hindered by large lattice mismatches and incompatible processing due to high III-V epitaxy temperatures. We report the first GaAs-based avalanche photodiodes (APDs) and light emitting diodes, directly grown on silicon at a very low, CMOS-compatible temperature and fabricated using conventional microfabrication techniques. The APDs exhibit an extraordinarily large multiplication factor at low voltage resulting from the unique needle shape and growth mode.
III-V 族化合物半导体器件与硅 CMOS 集成电路的单片集成受到大晶格失配和不兼容处理的阻碍，因为 III-V 外延温度很高。我们报告了第一个基于 GaAs 的雪崩光电二极管 (APD) 和发光二极管，它们直接在硅上以非常低的、与 CMOS 兼容的温度生长，并使用传统的微制造技术制造。APD 在外延温度很低的情况下，由于独特的针状形状和生长模式，在低电压下表现出非常大的倍增因子。
