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通过在二氧化硅波导晶圆上进行衬底转移形成的高质量硅微谐振器。

High-Q Si microresonators formed by substrate transfer on silica waveguide wafers.

作者信息

Ng W, Rockwood T, Persechini D, Chang D

机构信息

HRL Laboratories, LLC, Malibu, California, 90265 USA.

出版信息

Opt Express. 2010 Dec 20;18(26):27004-15. doi: 10.1364/OE.18.027004.

Abstract

We report the first demonstration of Si microresonators (MRs) fabricated via substrate transfer on a silica waveguide (WG) wafer. Specifically, these Si microdisks were fabricated on a layer of Si (0.16-0.2 μm thick) that was directly-bonded on a silica waveguide wafer. We measured the throughput and drop spectrum of these microdisks when coupled to bonded silica waveguides, and observed loaded quality-factors (Qs) of ≥10(4). We modeled, in addition, the dispersion of whispering gallery modes in these microdisks to show phase-matched coupling with an incident silica waveguide or fiber-taper. Using the measured extinction ratio and loaded-Q, we evaluated, in addition, the coupling coefficient between the incident waveguide/taper and Si MR.

摘要

我们报道了通过在二氧化硅波导(WG)晶圆上进行衬底转移制造硅微谐振器(MR)的首次演示。具体而言,这些硅微盘是在直接键合到二氧化硅波导晶圆上的一层硅(厚度为0.16 - 0.2μm)上制造的。当这些微盘与键合的二氧化硅波导耦合时,我们测量了它们的吞吐量和下降光谱,并观察到加载品质因数(Qs)≥10⁴。此外,我们对这些微盘中回音壁模式的色散进行了建模,以展示与入射二氧化硅波导或光纤锥的相位匹配耦合。利用测量的消光比和加载Q值,我们还评估了入射波导/光纤锥与硅微谐振器之间的耦合系数。

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