Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA.
Phys Rev Lett. 2010 Dec 31;105(26):266401. doi: 10.1103/PhysRevLett.105.266401. Epub 2010 Dec 20.
Angle resolved photoemission spectroscopy study on TlBiTe2 and TlBiSe2 from a thallium-based ternary chalcogenides family revealed a single surface Dirac cone at the center of the Brillouin zone for both compounds. For TlBiSe2, the large bulk gap (∼200 meV) makes it a topological insulator with better mechanical properties than the previous binary 3D topological insualtor family. For TlBiTe2, the observed negative bulk gap indicates it as a semimetal, instead of a narrow-gap semiconductor as conventionally believed; this semimetality naturally explains its mysteriously small thermoelectric figure of merit comparing to other compounds in the family. Finally, the unique band structures of TlBiTe2 also suggest it as a candidate for topological superconductors.
基于碲基三元硫族化合物的 TlBiTe2 和 TlBiSe2 的角分辨光电子能谱研究表明,这两种化合物在布里渊区中心都有一个单一的表面狄拉克锥。对于 TlBiSe2,由于其较大的体带隙(约 200 meV),使其成为一种拓扑绝缘体,具有比以前的二元 3D 拓扑绝缘体家族更好的机械性能。对于 TlBiTe2,观察到的负体带隙表明它是一种半金属,而不是传统上认为的窄带隙半导体;这种半金属性质自然解释了它与该家族中其他化合物相比,其热电优值为何小得惊人。最后,TlBiTe2 的独特能带结构也表明它可能是拓扑超导体的候选材料。