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有机金属晶格中的有机拓扑绝缘体。

Organic topological insulators in organometallic lattices.

机构信息

Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112, USA.

出版信息

Nat Commun. 2013;4:1471. doi: 10.1038/ncomms2451.

Abstract

Topological insulators are a recently discovered class of materials having insulating bulk electronic states but conducting boundary states distinguished by nontrivial topology. So far, several generations of topological insulators have been theoretically predicted and experimentally confirmed, all based on inorganic materials. Here, based on first-principles calculations, we predict a family of two-dimensional organic topological insulators made of organometallic lattices. Designed by assembling molecular building blocks of triphenyl-metal compounds with strong spin-orbit coupling into a hexagonal lattice, this new classes of organic topological insulators are shown to exhibit nontrivial topological edge states that are robust against significant lattice strain. We envision that organic topological insulators will greatly broaden the scientific and technological impact of topological insulators.

摘要

拓扑绝缘体是最近发现的一类材料,具有绝缘体的电子态但具有非平凡拓扑的边界传导态。到目前为止,已经理论预测和实验证实了几代拓扑绝缘体,它们都基于无机材料。在这里,我们基于第一性原理计算预测了一类由有机金属格子组成的二维有机拓扑绝缘体。通过将具有强自旋轨道耦合的三苯基金属化合物的分子构建块组装成六边形格子来设计,这种新的有机拓扑绝缘体类显示出具有拓扑边缘态的非平凡拓扑,这些边缘态对显著的晶格应变具有鲁棒性。我们设想有机拓扑绝缘体将极大地拓宽拓扑绝缘体的科学和技术影响。

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